A Technology Overview of the PowerChip Development Program
Author(s)Araghchini, Mohammad; Chen, Jun; Doan-Nguyen, Vicky; Harburg, Daniel V.; Jin, Donghyun; Kim, Jungkwun; Kim, Min Soo; Lim, Seungbum; Lu, Bin; Piedra, Daniel; Qiu, Jizheng; Ranson, John; Sun, Min; Yu, Xuehong; Yun, Hongseok; Allen, Mark G.; DesGroseilliers, Gary; Herrault, Florian; Lang, Jeffrey H.; Levey, Christopher G.; Murray, Christopher B.; Perreault, David J.; Sullivan, Charles R.; del Alamo, Jesus A.; Otten, David M.; Palacios, Tomas; ... Show more Show less
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The PowerChip research program is developing technologies to radically improve the size, integration, and performance of power electronics operating at up to grid-scale voltages (e.g., up to 200V) and low-to-moderate power levels (e.g., up to 50W) and demonstrating the technologies in a high-efficiency light-emitting diode driver, as an example application. This paper presents an overview of the program and of the progress toward meeting the program goals. Key program aspects and progress in advanced nitride power devices and device reliability, integrated high-frequency magnetics and magnetic materials, and high-frequency converter architectures are summarized.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology Laboratories; Massachusetts Institute of Technology. Research Laboratory of Electronics
IEEE Transactions on Power Electronics
Institute of Electrical and Electronics Engineers (IEEE)
Araghchini, Mohammad, Jun Chen, Vicky Doan-Nguyen, Daniel V. Harburg, Donghyun Jin, Jungkwun Kim, Min Soo Kim, et al. “A Technology Overview of the PowerChip Development Program.” IEEE Trans. Power Electron. 28, no. 9 (n.d.): 4182–4201.
Author's final manuscript