Current on/off ratio enhancement of field effect transistors with bundled carbon nanotubes
Author(s)
Feng, Y.; Lee, K.; Farhat, Hootan; Kong, Jing
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This work examines the enhancement of current on/off ratio in field effect transistordevices with bundled single-walled carbon nanotubes(CNTs) by incorporating a substrate etching step before the electrical cutting for metallic CNT elimination. The etching step prevents the damaging of the semiconducting CNTs while burning off the metallic ones by electrical current. By further incorporating a repeated gate voltage sweeping step, devices with low I[subscript off] (less than 2 nA) and high I[subscript on]/I[subscript off], which is one to five orders of magnitude larger than before etching/cutting combination process, can be obtained.
Date issued
2009-11Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Materials Science and EngineeringJournal
Journal of Applied Physics
Publisher
American Institute of Physics (AIP)
Citation
Feng, Y., K. Lee, H. Farhat, and J. Kong. “Current On/off Ratio Enhancement of Field Effect Transistors with Bundled Carbon Nanotubes.” Journal of Applied Physics 106, no. 10 (2009): 104505. © 2009 American Institute of Physics
Version: Final published version
ISSN
00218979
1089-7550