Study of transport properties in graphene monolayer flakes on SiO[sub 2] substrates
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We investigate the carrier mobility in monolayer and bilayer graphene with a top HfO2dielectric, as a function of the HfO2film thickness and temperature. The results show that the carrier mobility decreases during the deposition of the first 2–4 nm of top dielectric and remains constant for thicker layers. The carrier mobility shows a relatively weak dependence on temperature indicating that phonon scattering does not play a dominant role in controlling the carrier mobility. The data strongly suggest that fixed charged impurities located in close proximity to the graphene are responsible for the mobility degradation.
Date issued
2010-11Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology LaboratoriesJournal
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Publisher
American Institute of Physics/American Vacuum Society
Citation
Tirado, J. M., D. Nezich, X. Zhao, J. W. Chung, J. Kong, and T. Palacios. “Study of Transport Properties in Graphene Monolayer Flakes on SiO[sub 2] Substrates.” J. Vac. Sci. Technol. B 28, no. 6 (2010): C6D11.
Version: Final published version
ISSN
10711023