| dc.contributor.author | Tirado, J. M. | |
| dc.contributor.author | Nezich, Daniel A. | |
| dc.contributor.author | Zhao, X. | |
| dc.contributor.author | Chung, J. W. | |
| dc.contributor.author | Kong, Jing | |
| dc.contributor.author | Palacios, Tomas | |
| dc.date.accessioned | 2014-05-23T15:08:53Z | |
| dc.date.available | 2014-05-23T15:08:53Z | |
| dc.date.issued | 2010-11 | |
| dc.date.submitted | 2010-07 | |
| dc.identifier.issn | 10711023 | |
| dc.identifier.uri | http://hdl.handle.net/1721.1/87120 | |
| dc.description.abstract | We investigate the carrier mobility in monolayer and bilayer graphene with a top HfO2dielectric, as a function of the HfO2film thickness and temperature. The results show that the carrier mobility decreases during the deposition of the first 2–4 nm of top dielectric and remains constant for thicker layers. The carrier mobility shows a relatively weak dependence on temperature indicating that phonon scattering does not play a dominant role in controlling the carrier mobility. The data strongly suggest that fixed charged impurities located in close proximity to the graphene are responsible for the mobility degradation. | en_US |
| dc.description.sponsorship | European Social Fund | en_US |
| dc.description.sponsorship | Consejeria de Educacion y Ciencia de la Junta de Comunidades de Castilla-La Mancha | en_US |
| dc.description.sponsorship | Massachusetts Institute of Technology. Microsystems Technology Laboratories | en_US |
| dc.language.iso | en_US | |
| dc.publisher | American Institute of Physics/American Vacuum Society | en_US |
| dc.relation.isversionof | http://dx.doi.org/10.1116/1.3516649 | en_US |
| dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
| dc.source | MIT web domain | en_US |
| dc.title | Study of transport properties in graphene monolayer flakes on SiO[sub 2] substrates | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Tirado, J. M., D. Nezich, X. Zhao, J. W. Chung, J. Kong, and T. Palacios. “Study of Transport Properties in Graphene Monolayer Flakes on SiO[sub 2] Substrates.” J. Vac. Sci. Technol. B 28, no. 6 (2010): C6D11. | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Microsystems Technology Laboratories | en_US |
| dc.contributor.mitauthor | Nezich, Daniel A. | en_US |
| dc.contributor.mitauthor | Zhao, X. | en_US |
| dc.contributor.mitauthor | Chung, J. W. | en_US |
| dc.contributor.mitauthor | Kong, Jing | en_US |
| dc.contributor.mitauthor | Palacios, Tomas | en_US |
| dc.relation.journal | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures | en_US |
| dc.eprint.version | Final published version | en_US |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
| eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
| dspace.orderedauthors | Tirado, J. M.; Nezich, D.; Zhao, X.; Chung, J. W.; Kong, J.; Palacios, T. | en_US |
| dc.identifier.orcid | https://orcid.org/0000-0003-0551-1208 | |
| dc.identifier.orcid | https://orcid.org/0000-0002-2190-563X | |
| mit.license | PUBLISHER_POLICY | en_US |
| mit.metadata.status | Complete | |
