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dc.contributor.authorTimurdogan, Erman
dc.contributor.authorSorace-Agaskar, Cheryl M.
dc.contributor.authorSun, Jie
dc.contributor.authorShah Hosseini, Ehsan
dc.contributor.authorBiberman, Aleksandr
dc.contributor.authorWatts, Michael
dc.date.accessioned2014-10-21T13:30:28Z
dc.date.available2014-10-21T13:30:28Z
dc.date.issued2014-06
dc.date.submitted2013-12
dc.identifier.issn2041-1723
dc.identifier.urihttp://hdl.handle.net/1721.1/91011
dc.description.abstractSilicon photonics has emerged as the leading candidate for implementing ultralow power wavelength–division–multiplexed communication networks in high-performance computers, yet current components (lasers, modulators, filters and detectors) consume too much power for the high-speed femtojoule-class links that ultimately will be required. Here we demonstrate and characterize the first modulator to achieve simultaneous high-speed (25 Gb s[superscript −1]), low-voltage (0.5 V[subscript PP]) and efficient 0.9 fJ per bit error-free operation. This low-energy high-speed operation is enabled by a record electro-optic response, obtained in a vertical p–n junction device that at 250 pm V[superscript −1] (30 GHz V[superscript −1]) is up to 10 times larger than prior demonstrations. In addition, this record electro-optic response is used to compensate for thermal drift over a 7.5 °C temperature range with little additional energy consumption (0.24 fJ per bit for a total energy consumption below 1.03 J per bit). The combined results of highly efficient modulation and electro-optic thermal compensation represent a new paradigm in modulator development and a major step towards single-digit femtojoule-class communications.en_US
dc.description.sponsorshipUnited States. Defense Advanced Research Projects Agency. Electronic-Photonic Heterogeneous Integration Program (Grant HR0011-12-2-0007)en_US
dc.description.sponsorshipUnited States. Defense Advanced Research Projects Agency. Photonically Optimized Embedded Microprocessors Program (Award HR0011-11-C-0100)en_US
dc.description.sponsorshipAPIC Corporationen_US
dc.description.sponsorshipNational Science Foundation (U.S.). Graduate Research Fellowship (0645960)en_US
dc.language.isoen_US
dc.publisherNature Publishing Groupen_US
dc.relation.isversionofhttp://dx.doi.org/10.1038/ncomms5008en_US
dc.rightsCreative Commons Attribution-NonCommercial-ShareAlike 3.0 Unported Licenseen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/3.0/en_US
dc.sourceNatureen_US
dc.titleAn ultralow power athermal silicon modulatoren_US
dc.typeArticleen_US
dc.identifier.citationTimurdogan, Erman, Cheryl M. Sorace-Agaskar, Jie Sun, Ehsan Shah Hosseini, Aleksandr Biberman, and Michael R. Watts. “An Ultralow Power Athermal Silicon Modulator.” Nature Communications 5 (June 11, 2014).en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.mitauthorTimurdogan, Ermanen_US
dc.contributor.mitauthorSorace-Agaskar, Cheryl M.en_US
dc.contributor.mitauthorSun, Jieen_US
dc.contributor.mitauthorShah Hosseini, Ehsanen_US
dc.contributor.mitauthorBiberman, Aleksandren_US
dc.contributor.mitauthorWatts, Michaelen_US
dc.relation.journalNature Communicationsen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsTimurdogan, Erman; Sorace-Agaskar, Cheryl M.; Sun, Jie; Shah Hosseini, Ehsan; Biberman, Aleksandr; Watts, Michael R.en_US
dc.identifier.orcidhttps://orcid.org/0000-0002-9646-4357
mit.licensePUBLISHER_CCen_US


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