Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

Author(s)
Weinstein, Dana; Popa, Laura Cornelia
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Abstract
This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas (2DEG) as a second electrode. In the off state, this 2DEG can be depleted by applying a negative bias to the top electrode, suppressing transduction and reducing capacitive loading. Switchable AlGaN/GaN resonators are demonstrated from 240MHz to 3.5GHz with frequency-quality factor products up to 1.7×10[superscript 12] in air. Switching is shown in both devices with passive piezoelectric and HEMT sensing, with >19dB suppression in the off state.
Date issued
2013-06
URI
http://hdl.handle.net/1721.1/91021
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Physics
Journal
Proceedings of the 2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Popa, Laura C., and Dana Weinstein. “Switchable Piezoelectric Transduction in AlGaN/GaN MEMS Resonators.” 2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII) (June 2013).
Version: Author's final manuscript
ISBN
978-1-4673-5983-2
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