2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators

Author(s)
Weinstein, Dana; Popa, Laura Cornelia
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Abstract
A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly used metal electrodes. As a result, this transducer can be used for both the direct interrogation of GaN electromechanical properties and the realization of high Q resonators. A 1.2 GHz bulk acoustic resonator with mechanical Q of 1885 is demonstrated, with frequency quality factor product (f·Q) of 2.3×10[superscript 12], the highest measured in GaN to date.
Date issued
2013-07
URI
http://hdl.handle.net/1721.1/91022
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Physics
Journal
Proceedings of the 2013 Joint European Frequency and Time Forum & International Frequency Control Symposium (EFTF/IFC)
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Popa, Laura C., and Dana Weinstein. “2DEG Electrodes for Piezoelectric Transduction of AlGaN/GaN MEMS Resonators.” 2013 Joint European Frequency and Time Forum & International Frequency Control Symposium (EFTF/IFC) (July 2013).
Version: Author's final manuscript
ISBN
978-1-4799-0342-9
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