Resolution Limits of Electron-Beam Lithography toward the Atomic Scale
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We investigated electron-beam lithography with an aberration-corrected scanning transmission electron microscope. We achieved 2 nm isolated feature size and 5 nm half-pitch in hydrogen silsesquioxane resist. We also analyzed the resolution limits of this technique by measuring the point-spread function at 200 keV. Furthermore, we measured the energy loss in the resist using electron-energy-loss spectroscopy.
Date issued
2013-03Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Research Laboratory of ElectronicsJournal
Nano Letters
Publisher
American Chemical Society (ACS)
Citation
Manfrinato, Vitor R., Lihua Zhang, Dong Su, Huigao Duan, Richard G. Hobbs, Eric A. Stach, and Karl K. Berggren. “Resolution Limits of Electron-Beam Lithography Toward the Atomic Scale.” Nano Lett. (March 19, 2013): 130321102652000.
Version: Author's final manuscript
ISSN
1530-6984
1530-6992