Resolution Limits of Electron-Beam Lithography toward the Atomic Scale
Author(s)Zhang, Lihua; Su, Dong; Duan, Huigao; Stach, Eric A.; Berggren, Karl K.; Manfrinato, Vitor Riseti; Hobbs, Richard; ... Show more Show less
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We investigated electron-beam lithography with an aberration-corrected scanning transmission electron microscope. We achieved 2 nm isolated feature size and 5 nm half-pitch in hydrogen silsesquioxane resist. We also analyzed the resolution limits of this technique by measuring the point-spread function at 200 keV. Furthermore, we measured the energy loss in the resist using electron-energy-loss spectroscopy.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Research Laboratory of Electronics
American Chemical Society (ACS)
Manfrinato, Vitor R., Lihua Zhang, Dong Su, Huigao Duan, Richard G. Hobbs, Eric A. Stach, and Karl K. Berggren. “Resolution Limits of Electron-Beam Lithography Toward the Atomic Scale.” Nano Lett. (March 19, 2013): 130321102652000.
Author's final manuscript