Highly Efficient Midinfrared On-Chip Electrical Generation of Graphene Plasmons by Inelastic Electron Tunneling Excitation
Author(s)
Ooi, Kelvin J. A.; Chu, H. S.; Tan, Dawn T. H.; Ang, L. K.; Hsieh, Chang Yu
DownloadPhysRevApplied.3.054001.pdf (1.400Mb)
PUBLISHER_POLICY
Publisher Policy
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Terms of use
Metadata
Show full item recordAbstract
Inelastic electron tunneling provides a low-energy pathway for the excitation of surface plasmons and light emission. We theoretically investigate tunnel junctions based on metals and graphene. We show that graphene is potentially a highly efficient material for tunneling excitation of plasmons because of its narrow plasmon linewidths, strong emission, and large tunability in the midinfrared wavelength regime. Compared to gold and silver, the enhancement can be up to 10 times for similar wavelengths and up to 5 orders at their respective plasmon operating wavelengths. Tunneling excitation of graphene plasmons promises an efficient technology for on-chip electrical generation and manipulation of plasmons for graphene-based optoelectronics and nanophotonic integrated circuits.
Date issued
2015-05Department
Massachusetts Institute of Technology. Department of ChemistryJournal
Physical Review Applied
Publisher
American Physical Society
Citation
Ooi, Kelvin J. A., H. S. Chu, C. Y. Hsieh, Dawn T. H. Tan, and L. K. Ang. "Highly Efficient Midinfrared On-Chip Electrical Generation of Graphene Plasmons by Inelastic Electron Tunneling Excitation." Phys. Rev. Applied 3, 054001 (May 2015). © 2015 American Physical Society
Version: Final published version
ISSN
2331-7019