dc.contributor.author | Ooi, Kelvin J. A. | |
dc.contributor.author | Chu, H. S. | |
dc.contributor.author | Tan, Dawn T. H. | |
dc.contributor.author | Ang, L. K. | |
dc.contributor.author | Hsieh, Chang Yu | |
dc.date.accessioned | 2015-05-11T12:26:35Z | |
dc.date.available | 2015-05-11T12:26:35Z | |
dc.date.issued | 2015-05 | |
dc.date.submitted | 2015-03 | |
dc.identifier.issn | 2331-7019 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/96951 | |
dc.description.abstract | Inelastic electron tunneling provides a low-energy pathway for the excitation of surface plasmons and light emission. We theoretically investigate tunnel junctions based on metals and graphene. We show that graphene is potentially a highly efficient material for tunneling excitation of plasmons because of its narrow plasmon linewidths, strong emission, and large tunability in the midinfrared wavelength regime. Compared to gold and silver, the enhancement can be up to 10 times for similar wavelengths and up to 5 orders at their respective plasmon operating wavelengths. Tunneling excitation of graphene plasmons promises an efficient technology for on-chip electrical generation and manipulation of plasmons for graphene-based optoelectronics and nanophotonic integrated circuits. | en_US |
dc.description.sponsorship | Singapore University of Technology and Design (Massachusetts Institute of Technology International Design Center Grant IDG21200106) | en_US |
dc.description.sponsorship | Singapore University of Technology and Design (Massachusetts Institute of Technology International Design Center Grant IDD21200103) | en_US |
dc.publisher | American Physical Society | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1103/PhysRevApplied.3.054001 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | American Physical Society | en_US |
dc.title | Highly Efficient Midinfrared On-Chip Electrical Generation of Graphene Plasmons by Inelastic Electron Tunneling Excitation | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Ooi, Kelvin J. A., H. S. Chu, C. Y. Hsieh, Dawn T. H. Tan, and L. K. Ang. "Highly Efficient Midinfrared On-Chip Electrical Generation of Graphene Plasmons by Inelastic Electron Tunneling Excitation." Phys. Rev. Applied 3, 054001 (May 2015). © 2015 American Physical Society | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Chemistry | en_US |
dc.contributor.mitauthor | Hsieh, Chang Yu | en_US |
dc.relation.journal | Physical Review Applied | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dc.date.updated | 2015-05-08T22:00:08Z | |
dc.language.rfc3066 | en | |
dc.rights.holder | American Physical Society | |
dspace.orderedauthors | Ooi, Kelvin J. A.; Chu, H. S.; Hsieh, C. Y.; Tan, Dawn T. H.; Ang, L. K. | en_US |
dc.identifier.orcid | https://orcid.org/0000-0002-3931-001X | |
mit.license | PUBLISHER_POLICY | en_US |
mit.metadata.status | Complete | |