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dc.contributor.authorOoi, Kelvin J. A.
dc.contributor.authorChu, H. S.
dc.contributor.authorTan, Dawn T. H.
dc.contributor.authorAng, L. K.
dc.contributor.authorHsieh, Chang Yu
dc.date.accessioned2015-05-11T12:26:35Z
dc.date.available2015-05-11T12:26:35Z
dc.date.issued2015-05
dc.date.submitted2015-03
dc.identifier.issn2331-7019
dc.identifier.urihttp://hdl.handle.net/1721.1/96951
dc.description.abstractInelastic electron tunneling provides a low-energy pathway for the excitation of surface plasmons and light emission. We theoretically investigate tunnel junctions based on metals and graphene. We show that graphene is potentially a highly efficient material for tunneling excitation of plasmons because of its narrow plasmon linewidths, strong emission, and large tunability in the midinfrared wavelength regime. Compared to gold and silver, the enhancement can be up to 10 times for similar wavelengths and up to 5 orders at their respective plasmon operating wavelengths. Tunneling excitation of graphene plasmons promises an efficient technology for on-chip electrical generation and manipulation of plasmons for graphene-based optoelectronics and nanophotonic integrated circuits.en_US
dc.description.sponsorshipSingapore University of Technology and Design (Massachusetts Institute of Technology International Design Center Grant IDG21200106)en_US
dc.description.sponsorshipSingapore University of Technology and Design (Massachusetts Institute of Technology International Design Center Grant IDD21200103)en_US
dc.publisherAmerican Physical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1103/PhysRevApplied.3.054001en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAmerican Physical Societyen_US
dc.titleHighly Efficient Midinfrared On-Chip Electrical Generation of Graphene Plasmons by Inelastic Electron Tunneling Excitationen_US
dc.typeArticleen_US
dc.identifier.citationOoi, Kelvin J. A., H. S. Chu, C. Y. Hsieh, Dawn T. H. Tan, and L. K. Ang. "Highly Efficient Midinfrared On-Chip Electrical Generation of Graphene Plasmons by Inelastic Electron Tunneling Excitation." Phys. Rev. Applied 3, 054001 (May 2015). © 2015 American Physical Societyen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemistryen_US
dc.contributor.mitauthorHsieh, Chang Yuen_US
dc.relation.journalPhysical Review Applieden_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2015-05-08T22:00:08Z
dc.language.rfc3066en
dc.rights.holderAmerican Physical Society
dspace.orderedauthorsOoi, Kelvin J. A.; Chu, H. S.; Hsieh, C. Y.; Tan, Dawn T. H.; Ang, L. K.en_US
dc.identifier.orcidhttps://orcid.org/0000-0002-3931-001X
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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