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Effective lifetimes exceeding 300 μs in gettered p-type epitaxial kerfless silicon for photovoltaics

Author(s)
Powell, D. M.; Hao, R.; Ravi, T. S.; Hofstetter, Jasmin; Fenning, David P.; Buonassisi, Tonio; ... Show more Show less
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Abstract
We evaluate defect concentrations and investigate the lifetime potential of p-type single-crystal kerfless silicon produced via epitaxy for photovoltaics. In gettered material, low interstitial iron concentrations (as low as (3.2 ± 2.2) × 10[superscript 9] cm[superscript −3]) suggest that minority-carrier lifetime is not limited by dissolved iron. An increase in gettered lifetime from <20 to >300 μs is observed after increasing growth cleanliness. This improvement coincides with reductions in the concentration of Mo, V, Nb, and Cr impurities, but negligible change in the low area-fraction (<5%) of dislocated regions. Device simulations indicate that the high bulk lifetime of this material could support solar cell efficiencies >23%.
Date issued
2013-12
URI
http://hdl.handle.net/1721.1/97226
Department
Massachusetts Institute of Technology. Department of Mechanical Engineering; Massachusetts Institute of Technology. Research Laboratory of Electronics
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Powell, D. M., J. Hofstetter, D. P. Fenning, R. Hao, T. S. Ravi, and T. Buonassisi. “Effective Lifetimes Exceeding 300 Μs in Gettered p-Type Epitaxial Kerfless Silicon for Photovoltaics.” Appl. Phys. Lett. 103, no. 26 (December 23, 2013): 263902. © 2013 AIP Publishing LLC
Version: Final published version
ISSN
0003-6951
1077-3118

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