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Ferroelectric-gated terahertz plasmonics on graphene

Author(s)
Jin, Dafei; Kumar, Anshuman; Hung Fung, Kin; Xu, Jun; Fang, Nicholas Xuanlai
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Alternative title
Terahertz plasmonics in ferroelectric-gated graphene
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Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/
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Abstract
Inspired by recent advancement of ferroelectric-gated memories and transistors, we propose a design of ferroelectric-gated nanoplasmonic devices based on graphene sheets clamped in ferroelectric crystals. We show that the two-dimensional plasmons in graphene can strongly couple with the phonon-polaritons in ferroelectrics, leading to characteristic modal wavelength of the order of 100–200 nm at low temperature and low-THz frequencies albeit with an appreciable dissipation. By patterning the ferroelectrics into different domains, one can produce compact on-chip plasmonic waveguides, which exhibit negligible crosstalk even at 20 nm separation distance. Harnessing the memory effect of ferroelectrics, low-power operation can be achieved on these plasmonic waveguides.
Date issued
2013-05
URI
http://hdl.handle.net/1721.1/97426
Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Journal
Applied Physics Letters
Publisher
American Institute of Physics (AIP)
Citation
Jin, Dafei, Anshuman Kumar, Kin Hung Fung, Jun Xu, and Nicholas X. Fang. “Terahertz Plasmonics in Ferroelectric-Gated Graphene.” Appl. Phys. Lett. 102, no. 20 (2013): 201118.
Version: Original manuscript
ISSN
00036951
1077-3118

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