Show simple item record

dc.contributor.authorJin, Dafei
dc.contributor.authorKumar, Anshuman
dc.contributor.authorHung Fung, Kin
dc.contributor.authorXu, Jun
dc.contributor.authorFang, Nicholas Xuanlai
dc.date.accessioned2015-06-15T17:49:05Z
dc.date.available2015-06-15T17:49:05Z
dc.date.issued2013-05
dc.date.submitted2012-10
dc.identifier.issn00036951
dc.identifier.issn1077-3118
dc.identifier.urihttp://hdl.handle.net/1721.1/97426
dc.description.abstractInspired by recent advancement of ferroelectric-gated memories and transistors, we propose a design of ferroelectric-gated nanoplasmonic devices based on graphene sheets clamped in ferroelectric crystals. We show that the two-dimensional plasmons in graphene can strongly couple with the phonon-polaritons in ferroelectrics, leading to characteristic modal wavelength of the order of 100–200 nm at low temperature and low-THz frequencies albeit with an appreciable dissipation. By patterning the ferroelectrics into different domains, one can produce compact on-chip plasmonic waveguides, which exhibit negligible crosstalk even at 20 nm separation distance. Harnessing the memory effect of ferroelectrics, low-power operation can be achieved on these plasmonic waveguides.en_US
dc.description.sponsorshipNational Science Foundation (U.S.) (ECCS Award 1028568)en_US
dc.description.sponsorshipUnited States. Air Force Office of Scientific Research. Multidisciplinary University Research Initiative (Award FA9550-12-1-0488)en_US
dc.language.isoen_US
dc.publisherAmerican Institute of Physics (AIP)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1063/1.4807762en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourcearXiven_US
dc.titleFerroelectric-gated terahertz plasmonics on grapheneen_US
dc.title.alternativeTerahertz plasmonics in ferroelectric-gated grapheneen_US
dc.typeArticleen_US
dc.identifier.citationJin, Dafei, Anshuman Kumar, Kin Hung Fung, Jun Xu, and Nicholas X. Fang. “Terahertz Plasmonics in Ferroelectric-Gated Graphene.” Appl. Phys. Lett. 102, no. 20 (2013): 201118.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.mitauthorJin, Dafeien_US
dc.contributor.mitauthorKumar, Anshumanen_US
dc.contributor.mitauthorHung Fung, Kinen_US
dc.contributor.mitauthorXu, Junen_US
dc.contributor.mitauthorFang, Nicholas Xuanlaien_US
dc.relation.journalApplied Physics Lettersen_US
dc.eprint.versionOriginal manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/NonPeerRevieweden_US
dspace.orderedauthorsJin, Dafei; Kumar, Anshuman; Hung Fung, Kin; Xu, Jun; Fang, Nicholas X.en_US
dc.identifier.orcidhttps://orcid.org/0000-0003-0501-8843
dc.identifier.orcidhttps://orcid.org/0000-0002-7433-8341
dc.identifier.orcidhttps://orcid.org/0000-0002-9813-2401
dc.identifier.orcidhttps://orcid.org/0000-0001-5713-629X
mit.licenseOPEN_ACCESS_POLICYen_US
mit.metadata.statusComplete


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record