Sub-5 keV electron-beam lithography in hydrogen silsesquioxane resist
Author(s)Manfrinato, Vitor Riseti; Cheong, Lin Lee; Duan, Huigao; Winston, Donald; Berggren, Karl K.; Smith, Henry Ignatius; ... Show more Show less
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We fabricated 9–30 nm half-pitch nested Ls and 13–15 nm half-pitch dot arrays, using 2 keV electron-beam lithography with hydrogen silsesquioxane (HSQ) as the resist. All structures with 15 nm half-pitch and above were fully resolved. We observed that the 9 and 10-nm half-pitch nested Ls and the 13-nm-half-pitch dot array contained some resist residues. We obtained good agreement between experimental and Monte-Carlo-simulated point-spread functions at energies of 1.5, 2, and 3 keV. The long-range proximity effect was minimal, as indicated by simulated and patterned 30 nm holes in negative-tone resist.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Research Laboratory of Electronics
Manfrinato, Vitor R., Lin Lee Cheong, Huigao Duan, Donald Winston, Henry I. Smith, and Karl K. Berggren. “Sub-5keV Electron-Beam Lithography in Hydrogen Silsesquioxane Resist.” Microelectronic Engineering 88, no. 10 (October 2011): 3070–3074.
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