Sub-5 keV electron-beam lithography in hydrogen silsesquioxane resist
Author(s)
Manfrinato, Vitor Riseti; Cheong, Lin Lee; Duan, Huigao; Winston, Donald; Berggren, Karl K.; Smith, Henry Ignatius; ... Show more Show less
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We fabricated 9–30 nm half-pitch nested Ls and 13–15 nm half-pitch dot arrays, using 2 keV electron-beam lithography with hydrogen silsesquioxane (HSQ) as the resist. All structures with 15 nm half-pitch and above were fully resolved. We observed that the 9 and 10-nm half-pitch nested Ls and the 13-nm-half-pitch dot array contained some resist residues. We obtained good agreement between experimental and Monte-Carlo-simulated point-spread functions at energies of 1.5, 2, and 3 keV. The long-range proximity effect was minimal, as indicated by simulated and patterned 30 nm holes in negative-tone resist.
Date issued
2011-06Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Research Laboratory of ElectronicsJournal
Microelectronic Engineering
Publisher
Elsevier
Citation
Manfrinato, Vitor R., Lin Lee Cheong, Huigao Duan, Donald Winston, Henry I. Smith, and Karl K. Berggren. “Sub-5keV Electron-Beam Lithography in Hydrogen Silsesquioxane Resist.” Microelectronic Engineering 88, no. 10 (October 2011): 3070–3074.
Version: Author's final manuscript
ISSN
01679317