Sub-5 keV electron-beam lithography in hydrogen silsesquioxane resist
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Berggren-Sub-5 keV.pdf
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Author(s)
Manfrinato, Vitor Riseti
Cheong, Lin Lee
Duan, Huigao
Winston, Donald
Berggren, Karl K.
Smith, Henry Ignatius
Date Issued
June 2011
Journal
Microelectronic Engineering
Publisher
Elsevier
Citation
Manfrinato, Vitor R., Lin Lee Cheong, Huigao Duan, Donald Winston, Henry I. Smith, and Karl K. Berggren. “Sub-5keV Electron-Beam Lithography in Hydrogen Silsesquioxane Resist.” Microelectronic Engineering 88, no. 10 (October 2011): 3070–3074.
Version
Author's final manuscript
Abstract
We fabricated 9–30 nm half-pitch nested Ls and 13–15 nm half-pitch dot arrays, using 2 keV electron-beam lithography with hydrogen silsesquioxane (HSQ) as the resist. All structures with 15 nm half-pitch and above were fully resolved. We observed that the 9 and 10-nm half-pitch nested Ls and the 13-nm-half-pitch dot array contained some resist residues. We obtained good agreement between experimental and Monte-Carlo-simulated point-spread functions at energies of 1.5, 2, and 3 keV. The long-range proximity effect was minimal, as indicated by simulated and patterned 30 nm holes in negative-tone resist.
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Massachusetts Institute of Technology. Research Laboratory of Electronics
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Creative Commons Attribution-Noncommercial-NoDerivatives
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DOI of Published Version
https://doi.org/10.1016/j.mee.2011.05.024
