Three-dimensional nanofabrication using HSQ/PMMA bilayer resists
Author(s)Do, Hyung Wan; Chang, Jae-Byum; Berggren, Karl K.
Three-dimensional nanofabrication using hydrogen silsesquioxane/poly(methylmethacrylate) bilayer resists
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In this work, the authors developed two processes for fabricating three-dimensional (3D) nanostructures using a hydrogen silsesquioxane and poly(methylmethacrylate) bilayer resist stack. The resist stack was patterned in a single electron-beam writing step without removing the wafer. The resulting 3D nanostructures naturally achieved vertical self-alignment without the need for any intermediate alignment. Self-aligned mushroom-shaped posts and freestanding supported structures were demonstrated.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Program in Media Arts and Sciences (Massachusetts Institute of Technology)
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
American Vacuum Society (AVS)
Do, Hyung Wan, Jae-Byum Chang, and Karl K. Berggren. “Three-Dimensional Nanofabrication Using Hydrogen Silsesquioxane/poly(methylmethacrylate) Bilayer Resists.” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32, no. 6 (November 2014): 06F501.
Author's final manuscript