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Three-dimensional nanofabrication using HSQ/PMMA bilayer resists

Author(s)
Do, Hyung Wan; Chang, Jae-Byum; Berggren, Karl K.
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Alternative title
Three-dimensional nanofabrication using hydrogen silsesquioxane/poly(methylmethacrylate) bilayer resists
Terms of use
Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/
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Abstract
In this work, the authors developed two processes for fabricating three-dimensional (3D) nanostructures using a hydrogen silsesquioxane and poly(methylmethacrylate) bilayer resist stack. The resist stack was patterned in a single electron-beam writing step without removing the wafer. The resulting 3D nanostructures naturally achieved vertical self-alignment without the need for any intermediate alignment. Self-aligned mushroom-shaped posts and freestanding supported structures were demonstrated.
Date issued
2014-08
URI
http://hdl.handle.net/1721.1/99750
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Department of Materials Science and Engineering; Program in Media Arts and Sciences (Massachusetts Institute of Technology)
Journal
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Publisher
American Vacuum Society (AVS)
Citation
Do, Hyung Wan, Jae-Byum Chang, and Karl K. Berggren. “Three-Dimensional Nanofabrication Using Hydrogen Silsesquioxane/poly(methylmethacrylate) Bilayer Resists.” Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 32, no. 6 (November 2014): 06F501.
Version: Author's final manuscript
ISSN
2166-2746
2166-2754

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