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Anode-Integrated GaN Field Emitter Arrays for Compact Vacuum Transistors

Author(s)
Shih, Pao-Chuan; Perozek, Joshua; Akinwande, Akintunde I.; Palacios, Tomás
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Abstract
Field-emission-based vacuum transistors have been proposed as promising candidates for future high-power and harsh-environment electronic devices. However, the lack of an integrated anode is still an issue for vertical field-emission vacuum transistors for some applications such as radiation-hard vacuum electronic-based circuits. In this work, an anode-integration technology enabled by tilted metal deposition is proposed and experimentally demonstrated on GaN gated field emitter arrays (FEAs). Full transistor prototypes with a 103 on-off ratio in anode current are demonstrated. This process is compatible with gated FEAs of various materials, the vacuum channel can be sealed during fabrication, and the vacuum channel length can be controlled via multiple process parameters.
Date issued
2023-11
URI
https://hdl.handle.net/1721.1/153655
Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
P. -C. Shih, J. Perozek, A. I. Akinwande and T. Palacios, "Anode-Integrated GaN Field Emitter Arrays for Compact Vacuum Transistors," in IEEE Electron Device Letters, vol. 44, no. 11, pp. 1895-1898, Nov. 2023.
Version: Author's final manuscript
ISSN
0741-3106
1558-0563
Keywords
Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

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