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dc.contributor.authorChung, Jinwook
dc.contributor.authorLu, Bin
dc.contributor.authorPalacios, Tomas
dc.date.accessioned2010-10-07T21:09:45Z
dc.date.available2010-10-07T21:09:45Z
dc.date.issued2009-07
dc.date.submitted2009-06
dc.identifier.isbn978-1-4244-2803-8
dc.identifier.issn0149-645X
dc.identifier.otherINSPEC Accession Number: 10788700
dc.identifier.urihttp://hdl.handle.net/1721.1/58959
dc.description.abstractThe seamless integration of AlGaN/GaN transistors and Si CMOS electronics on the same chip will revolutionize digital and mixed signal electronics. In this talk we describe our group's effort on demonstrating this integration. Si-GaN-Si virtual substrates have been recently fabricated through substrate removal and wafer bonding processes. The very high thermal stability of nitrides allows for the fabrication of Si CMOS electronics on these substrates without degrading the performance of the embedded nitride layer. In addition, GaN transistors on Si (001) have been fabricated on these substrates for the first time. Some of the many new circuits and devices that this integration allows include high power analog-to-digital converters, high speed differential amplifiers, normally-off power transistors, and highly-compact power regulator circuits.en_US
dc.description.sponsorshipUnited States. Defense Advanced Research Projects Agency (DARPA) (Young Faculty Award)en_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineersen_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/MWSYM.2009.5165897en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceIEEEen_US
dc.subjectSiliconen_US
dc.subjectNitride Semiconductorsen_US
dc.subjectMOSFETen_US
dc.subjectIntegrationen_US
dc.subjectHigh Electron Mobility Transistoren_US
dc.subjectHEMTen_US
dc.titleOn-Wafer Integration of Nitrides and Si Devices: Bringing the Power of Polarization to Sien_US
dc.typeArticleen_US
dc.identifier.citationChung, J.W., Bin Lu, and T. Palacios. “On-wafer integration of nitrides and Si devices: Bringing the power of polarization to Si.” Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International. 2009. 1117-1120. © Copyright 2010 IEEEen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.approverPalacios, Tomas
dc.contributor.mitauthorChung, Jinwook
dc.contributor.mitauthorLu, Bin
dc.contributor.mitauthorPalacios, Tomas
dc.relation.journalProceedings of the IEEE MTT-S International Microwave Symposium Digest, 2009en_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsChung, Jinwook W.; Bin Lu, Jinwook W.; Palacios, Tomasen
dc.identifier.orcidhttps://orcid.org/0000-0002-2190-563X
dc.identifier.orcidhttps://orcid.org/0000-0003-2208-0665
mit.licensePUBLISHER_POLICYen_US


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