Lifetime estimation of intrinsic silicon nitride MIM capacitors in a gan MMIC process
Name
Lifetime Estimation Extended Abstract_v4.pdf
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176.19 KB
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Author(s)
Demirtas, Sefa
del Alamo, Jesus A.
Gajewski, Donald A.
Hanson, Allen
Date Issued
May 2009
Journal
International Conference on Compound Semiconductor Manufacturing Technology (2009 On-line Digest)
Publisher
CS ManTech
Citation
Demirtas, Sefa, et al. "Lifetime estimation of intrinsic silicon nitride MIM capacitors in a gan MMIC process." CS MANTECH Conference, May 18th-21st, 2009, Tampa, Florida, USA http://www.csmantech.org/Digests/2009/2009%20Papers/4.2.pdf
Version
Author's final manuscript
Abstract
We have studied the reliability of intrinsic SiN MIM capacitors designed for 48 V and 125 [superscript 0]C operation and manufactured in a GaN process flow. It is shown that very small area capacitors (10um x 10um) with a dielectric thickness of 400nm exhibit lifetimes as long as 1.48E10 hours under such conditions.
Description
CS MANTECH Conference, May 18th-21st, 2009, Tampa, Florida, USA
MIT Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
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Creative Commons Attribution-Noncommercial-Share Alike 3.0
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DOI of Published Version
http://www.csmantech.org/Digests/2009/2009%20Papers/4.2.pdf
