Lifetime estimation of intrinsic silicon nitride MIM capacitors in a gan MMIC process

Author(s)
Demirtas, Sefa; del Alamo, Jesus A.; Gajewski, Donald A.; Hanson, Allen
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Abstract
We have studied the reliability of intrinsic SiN MIM capacitors designed for 48 V and 125 [superscript 0]C operation and manufactured in a GaN process flow. It is shown that very small area capacitors (10um x 10um) with a dielectric thickness of 400nm exhibit lifetimes as long as 1.48E10 hours under such conditions.
Description
CS MANTECH Conference, May 18th-21st, 2009, Tampa, Florida, USA
Date issued
2009-05
URI
http://hdl.handle.net/1721.1/71582
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
International Conference on Compound Semiconductor Manufacturing Technology (2009 On-line Digest)
Publisher
CS ManTech
Citation
Demirtas, Sefa, et al. "Lifetime estimation of intrinsic silicon nitride MIM capacitors in a gan MMIC process." CS MANTECH Conference, May 18th-21st, 2009, Tampa, Florida, USA http://www.csmantech.org/Digests/2009/2009%20Papers/4.2.pdf
Version: Author's final manuscript
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