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Large-scale 2D electronics based on single-layer MoS[subscript 2] grown by chemical vapor deposition

dc.contributor.authorWang, H.
dc.contributor.authorYu, L.
dc.contributor.authorLee, Y.-H.
dc.contributor.authorFang, W.
dc.contributor.authorHsu, Allen Long
dc.contributor.authorChin, M.
dc.contributor.authorDubey, Madan
dc.contributor.authorLi, L.-J.
dc.contributor.authorKong, Jing
dc.contributor.authorHerring, Patrick Kenichi
dc.contributor.authorPalacios, Tomas
dc.date.accessioned2014-05-22T18:49:20Z
dc.date.available2014-05-22T18:49:20Z
dc.date.issued2012-12
dc.identifier.isbn978-1-4673-4871-3
dc.identifier.isbn978-1-4673-4872-0
dc.identifier.isbn978-1-4673-4870-6
dc.identifier.urihttp://hdl.handle.net/1721.1/87106
dc.description.abstract2D nanoelectronics based on single-layer MoS[subscript 2] offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-layer MoS[subscript 2] and fabrication of integrated devices and circuits for the first time. Fundamental building blocks of digital electronics, such as inverters and NAND gates, are fabricated to demonstrate its capability for logic applications.en_US
dc.description.sponsorshipUnited States. Office of Naval Research. Young Investigator Programen_US
dc.description.sponsorshipU.S. Army Research Laboratoryen_US
dc.language.isoen_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/IEDM.2012.6478980en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourcearXiven_US
dc.titleLarge-scale 2D electronics based on single-layer MoS[subscript 2] grown by chemical vapor depositionen_US
dc.typeArticleen_US
dc.identifier.citationWang, H., L. Yu, Y.-H. Lee, W. Fang, A. Hsu, P. Herring, M. Chin, et al. “Large-Scale 2D Electronics Based on Single-Layer MoS<inf>2</inf> Grown by Chemical Vapor Deposition.” 2012 International Electron Devices Meeting (n.d.).en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Physicsen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.contributor.mitauthorWang, H.en_US
dc.contributor.mitauthorYu, L.en_US
dc.contributor.mitauthorLee, Y.-H.en_US
dc.contributor.mitauthorFang, W.en_US
dc.contributor.mitauthorHsu, Allen Longen_US
dc.contributor.mitauthorHerring, Patrick Kenichien_US
dc.contributor.mitauthorKong, Jingen_US
dc.contributor.mitauthorPalacios, Tomasen_US
dc.relation.journalProceedings of the 2012 International Electron Devices Meeting (IEDM)en_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/ConferencePaperen_US
eprint.statushttp://purl.org/eprint/status/NonPeerRevieweden_US
dspace.orderedauthorsWang, H.; Yu, L.; Lee, Y.-H.; Fang, W.; Hsu, A.; Herring, P.; Chin, M.; Dubey, M.; Li, L.-J.; Kong, J.; Palacios, T.en_US
dc.identifier.orcidhttps://orcid.org/0000-0002-3416-3962
dc.identifier.orcidhttps://orcid.org/0000-0001-5777-8364
dc.identifier.orcidhttps://orcid.org/0000-0003-0551-1208
dc.identifier.orcidhttps://orcid.org/0000-0002-2190-563X
dspace.mitauthor.errortrue
mit.licenseOPEN_ACCESS_POLICYen_US
mit.metadata.statusComplete


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