Controlling Epitaxial GaAs[subscript x]P[subscript 1-x]/Si[subscript 1-y]Ge[subscript y] Heterovalent Interfaces
Author(s)Sharma, Prithu; Milakovich, Timothy J.; Bulsara, Mayank; Fitzgerald, Eugene A.
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High quality epitaxial growth of GaAsP on SiGe templates would allow access to materials and band gaps that would enable novel, high performance devices on Si. However, GaAsP/SiGe interface engineering has proved to be very complex. In this paper, we explore the effects of strain at the heterovalent interface between GaAsP and SiGe alloys on the overall defect morphology.
DepartmentMassachusetts Institute of Technology. Materials Processing Center; Massachusetts Institute of Technology. Department of Materials Science and Engineering
Sharma, P., T. Milakovich, M. T. Bulsara, and E. A. Fitzgerald. “Controlling Epitaxial GaAsxP1-x/Si1-yGey Heterovalent Interfaces.” ECS Transactions 50, no. 9 (March 15, 2013): 333–337. © 2012 ECS - The Electrochemical Society
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