Controlling Epitaxial GaAs[subscript x]P[subscript 1-x]/Si[subscript 1-y]Ge[subscript y] Heterovalent Interfaces

Author(s)
Sharma, Prithu; Milakovich, Timothy J.; Bulsara, Mayank; Fitzgerald, Eugene A.
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Abstract
High quality epitaxial growth of GaAsP on SiGe templates would allow access to materials and band gaps that would enable novel, high performance devices on Si. However, GaAsP/SiGe interface engineering has proved to be very complex. In this paper, we explore the effects of strain at the heterovalent interface between GaAsP and SiGe alloys on the overall defect morphology.
Date issued
2013-03
URI
http://hdl.handle.net/1721.1/91920
Department
MIT Materials Research Laboratory; Massachusetts Institute of Technology. Department of Materials Science and Engineering
Journal
ECS Transactions
Publisher
Electrochemical Society
Citation
Sharma, P., T. Milakovich, M. T. Bulsara, and E. A. Fitzgerald. “Controlling Epitaxial GaAsxP1-x/Si1-yGey Heterovalent Interfaces.” ECS Transactions 50, no. 9 (March 15, 2013): 333–337. © 2012 ECS - The Electrochemical Society
Version: Final published version
ISSN
1938-6737
1938-5862
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