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dc.contributor.authorSharma, Prithu
dc.contributor.authorMilakovich, Timothy J.
dc.contributor.authorBulsara, Mayank
dc.contributor.authorFitzgerald, Eugene A.
dc.date.accessioned2014-11-26T15:18:10Z
dc.date.available2014-11-26T15:18:10Z
dc.date.issued2013-03
dc.date.submitted2012-10
dc.identifier.issn1938-6737
dc.identifier.issn1938-5862
dc.identifier.urihttp://hdl.handle.net/1721.1/91920
dc.description.abstractHigh quality epitaxial growth of GaAsP on SiGe templates would allow access to materials and band gaps that would enable novel, high performance devices on Si. However, GaAsP/SiGe interface engineering has proved to be very complex. In this paper, we explore the effects of strain at the heterovalent interface between GaAsP and SiGe alloys on the overall defect morphology.en_US
dc.description.sponsorshipUnited States. Army Research Office (Grant W911NF-09-1-0222)en_US
dc.language.isoen_US
dc.publisherElectrochemical Societyen_US
dc.relation.isversionofhttp://dx.doi.org/10.1149/05009.0333ecsten_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceMIT web domainen_US
dc.titleControlling Epitaxial GaAs[subscript x]P[subscript 1-x]/Si[subscript 1-y]Ge[subscript y] Heterovalent Interfacesen_US
dc.typeArticleen_US
dc.identifier.citationSharma, P., T. Milakovich, M. T. Bulsara, and E. A. Fitzgerald. “Controlling Epitaxial GaAsxP1-x/Si1-yGey Heterovalent Interfaces.” ECS Transactions 50, no. 9 (March 15, 2013): 333–337. © 2012 ECS - The Electrochemical Societyen_US
dc.contributor.departmentMIT Materials Research Laboratoryen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineeringen_US
dc.contributor.mitauthorSharma, Prithuen_US
dc.contributor.mitauthorMilakovich, Timothy J.en_US
dc.contributor.mitauthorBulsara, Mayanken_US
dc.contributor.mitauthorFitzgerald, Eugene A.en_US
dc.relation.journalECS Transactionsen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.orderedauthorsSharma, P.; Milakovich, T.; Bulsara, M. T.; Fitzgerald, E. A.en_US
dc.identifier.orcidhttps://orcid.org/0000-0002-1891-1959
dspace.mitauthor.errortrue
mit.licensePUBLISHER_POLICYen_US
mit.metadata.statusComplete


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